| 摘要 |
PURPOSE:To prevent the characteristics and the reliability of a device from reducing even though the device is finely formed by a method wherein a contact hole is provided on a high-concentration impurity layer under a first insulating film, a flattened film on a second insulating film is removed to make the flattened film remain only in the contact hole and the contact hole is filled with the flattened film. CONSTITUTION:An element region 20 is formed on a P-type Si substrate 18 and a high-concentration impurity layer 21 is formed. Then, a CVD-SiO2 film 22 (a first insulating film) is formed by deposition on the whole surface and an anisotropic dry etching is performed to provide a contact hole 23 in the film 22. After that, a poly Si layer 24 is deposition-formed on the whole surface and As ions are implanted in this layer. Then, the layer 24 is subjected to thermal oxidation to form a thermal oxidation film 25 (a second insulating film). Subsequently, a poly Si layer 26 is deposition-formed by an LPCVD method, the surface of this layer 26 is subjected to anisotropic dry etching to remove the layer 25 which is exposed. Then, an Al layer or an Al-Si layer is formed on the whole surface by a sputtering method and a patterning is performed to form a wiring 27.
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