发明名称 DEVICE FOR MOLECULAR-BEAM EPITAXY
摘要 PURPOSE:To directly vaporize a vapor depositing material even in staying of a gas thereof emitted from a crucible in a deflecting means and make it possible to readily irradiate the gas in a given direction, by providing the deflecting means and heating means above the crucible for containing a vapor depositing material. CONSTITUTION:A nozzle 5 as a deflecting means is provided above a crucible 3 having a heater 4. A heater 6 for heating the nozzle 5 is simultaneously provided. A vapor depositing material (e.g. Ga or Al) is contained in the crucible 3 and the vapor depositing material is heated with the heater 4 to emit a gas, which is then led onto a substrate 8 with the nozzle 5 to irradiate the substrate 8 and carry out vapor deposition. In the process, since the gas of the vapor depositing material emitted from the crucible 3 is heated with the heater 6 even if the gas stays on the wall surface of the nozzle 5, the deposit is directly vaporized and the gas is jetted from the tip of the nozzle 5 toward the downward substrate 8 to enable irradiation and vapor deposition of the substrate 8 thereon.
申请公布号 JPS63297294(A) 申请公布日期 1988.12.05
申请号 JP19870133071 申请日期 1987.05.28
申请人 JEOL LTD 发明人 KONDO KOJIN
分类号 H01L21/203;C30B23/08;C30B29/40 主分类号 H01L21/203
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