| 摘要 |
PURPOSE:To facilitate the control of a value of resistance without imparting a damage to a heat-resistant resin layer and to perform a wire bonding stably, by forming an undercoat layer of silicon oxynitride between the heat-resistant resin layer and heating resistors. CONSTITUTION:A heat-resistant resin layer 10 is formed on a high-heat conductive substrate 9, and on the surface thereof a surface-modifying treatment is applied. On the heat-resistant resin layer 10 treated with the surface- modification, an undercoat layer 11 of silicon oxynitride is formed by a physical evaporating method. On the undercoat layer, a large number of heating resistors 12 and conductors are successively formed. The undercoat layer 11 preferably has a thickness in the range of 500-10000Angstrom . If the thickness is less than 500 1, the heat resistant resin layer cannot be sufficiently protected, and a value of resistance and bonding properties cannot be stabilized; if more than 10000Angstrom , a more effect cannot be obtained, and a longer time is required for forming a film. Since the heating resistors can be formed without generating a gas, a value of resistance is easily controlled. Since the cushion effect of the heat- resistant resin layer is set off by the hardness of the undercoat layer, a wire bonding can be stably performed.
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