| 摘要 |
PURPOSE:To increase surface area of a molecular beam source and improve emission efficiency of molecular beams, heating efficiency of a molecular beam material, etc., by depositing vapor of the molecular beam material on the whole inner wall surface of a crucible and using the inner wall surface as the molecular beam source for a molecular-beam epitaxial device. CONSTITUTION:Vapor of a sublimation type molecular beam material 11 (e.g. beryllium or silicon) is uniformly deposited on the inner wall of a crucible 10 and used as a molecular beam source for a molecular-beam epitaxial device. A method for placing the sublimation type molecular beam material 11 on the bottom of the crucible 10, heating the molecular beam material using only the lower side part of a heating heater 17 in a state of a closed molecular beam shutter in front of the crucible to sublime the molecular beam material 11 and depositing vapor on the inner wall in the unheated upper part of the crucible 10 is cited as one example for preparing this molecular beam source. In use, the heater 17 in the upper part of the crucible 10 is used for heating and the molecular beam source is fed from the inner wall.
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