| 摘要 |
PURPOSE:To homogenize a gallium arsenide single crystal and readily obtain the electrically homogeneous single crystal, by previously heat-treating a gallium arsenide single crystal grown by a liquid encapsulated Czochralski (LEC) method at a relatively low temperature and carrying out ingot.annealing at a specific temperature. CONSTITUTION:A gallium arsenide single crystal grown by the LEC method is previously heat-treated at a relatively low temperature of 200-600 deg.C for about 5-20hr. Defects in an unstable state in electrically active defects present in the grown gallium arsenide single crystal are converted into a state without disappearing even at 800-900 deg.C temperature. Ingot.annealing is then carried out at 800-900 deg.C temperature to contrive stabilization of such defects, attain uniform defect distribution and homogenize the gallium arsenide single crystal. An electronic device having excellent characteristics with stabilized properties can be realized by using this single crystal.
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