发明名称 SEMICONDUCTOR PRESSURE SENSOR AND ITS MANUFACTURE
摘要 PURPOSE:To eliminate the adverse influence of remaining sodium by constituting the center part of a planar semiconductor material thin and superposing a semiconductor chip where a piezoelectric resistance element is formed, a glass- made pedestal, and a metal pedestal on one surface of the thin part. CONSTITUTION:The silicon chip 1, glass pedestal 2, and metal pedestal 4 are superposed one over another in a cylindrical insulating jig 5 while supported concentrically. Then the anode of a power source is brought into contact with the silicon chip 1 and metal pedestal 4 respectively and an anode connection is made at, for example, 300 deg.C and 1,500V. Sodium ions (Na<+>) are gathered nearby a conductive part 3. Oxygen ions (O<-->) are gathered on the surface connected to the silicon chip 1 and the surface brought into contact with metal pedestal 4. A sensing member 10 which is thus manufactured have the sodium ions gathering and remaining at the axial center part of the glass pedestals 2. Therefore, even if the sodium ions swell by moisture absorption, the connection part is not strained and the influence upon the silicon chip can be ignored.
申请公布号 JPS63298021(A) 申请公布日期 1988.12.05
申请号 JP19870131901 申请日期 1987.05.29
申请人 HITACHI LTD 发明人 KOBORI SHIGEYUKI;SUZUKI KIYOMITSU;OZAWA MASAYUKI;MIYAZAKI ATSUSHI
分类号 G01L9/04;G01L9/00 主分类号 G01L9/04
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