METHOD FOR FORMING PATTERN

摘要

PURPOSE:To form a fine and precise pattern even on a substrate having large surface unevenness using a dry-etching method composed mainly of physical sputtering technique, by forming a resist film by plasma polymerization. CONSTITUTION:A resist pattern 4a of a resist film is formed on a substrate 1 having large difference in thickness of the face to be processed. A processing material free from said resist film is removed by dry etching process to form a pattern on the processing surface. In the above process, said resist film is formed by plasma polymerization. The plasma polymerization is carried out preferably by using a monomer capable of forming a photo-sensitive polymeric compound (e.g. methyl methacrylate) in pure state or in a state of a gaseous mixture with vapor of other organic compound or inert gas.