| 摘要 |
PURPOSE:To enable accurate correction of temperature with a simplified construction, by forming, a light receiving element and a temperature sensor on the same plane of a semiconductor substrate close to each other. CONSTITUTION:An isolation layer 6 avoids interference between an output signal from a (p) layer 3 as light receiving element and an output signal from a temperature sensor 7. An SiO2 layer 4 covers the (p) layer 3 and the sensor 7 to protect. Moreover, a light shielding film 5 covers the sensor 7 through the SiO2 to prevent an output from the sensor 7b from being disturbed otherwise caused by irradiation of the sensor 7 with a measuring beam. A hole 8 is par tially formed or the SiO2 layer 4 so as to reach the (p) layer 3 and an Al elec trode 9 is formed in the hole 8 to make a positive electrode. On the other hand, a highly dense N<+> layer is diffused entirely over the other surface of a semicon ductor substrate 2 and an Al electrode 9 is formed thereon to make a negative electrode. The (p) layer 3 and the sensor 7 are formed on the same plane of the substrate 2 close to each other, thereby enabling accurate detection and correction of temperature at a light receiving section.
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