发明名称 FORMATION OF RESIST PATTERN
摘要 PURPOSE:To obtain the sufficient thermal resistance by using UV curing device of a low-output light source without a need for a long-hour process and for an investment in plant and equipment by a method wherein a groove whose depth is less than a thickness of a resist pattern is formed inside the resist pattern. CONSTITUTION:A positive-type photoresist film 2 is formed on a substrate 1 to be processed. Then, an exposure operation is executed via a mask to which a vacant pattern 4 whose size is less than a limit of resolution of the resist film 2 is attached. Then, after a development operation, UV curing operation is executed by irradiation with UV rays 6 while the substrate is being heattreated 7 and a resist pattern having a groove whose depth is less than a thickness of the pattern is formed inside the resist pattern. By this setup, an area of a resist-hardening layer 2d on the surface is expanded after the UV process and the layer becomes strong structurally against internal stress. Accordingly, it is possible to obtain the sufficient thermal resistance by using a UV curing device of a low-output light source and to achieve the desired purpose.
申请公布号 JPS63296221(A) 申请公布日期 1988.12.02
申请号 JP19870134253 申请日期 1987.05.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOYAMA TORU
分类号 G03F7/26;G03C5/00;G03F7/00;H01L21/027;H01L21/30 主分类号 G03F7/26
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