MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To eliminate the formation of a compound consisting of phosphorus and titanium and to eliminate residues by an RIE method by a method wherein the concentration of phosphorus in a poly Si film is set 3X10<20>/cm<3> or less. CONSTITUTION:An SiO2 film 2 is formed on an Si substrate 1 by a thermal oxidation method and SiH4 is thermally decomposed by an LPCVD method to form a poly-Si film 3. Then, phosphorus is diffused in the poly-Si film 3 by a thermal diffusion method in a Pocl3-containing atmosphere to form an n<+> poly-Si film 3, a WSi2 film 4 and a TiSi2 film 5 are respectively formed by a sputtering method and a resist pattern 6 is formed. In this titanium silicide- containing polysilicide, the concentration of the P in the n<+> poly-Si film 3 is set to 3X10<20>/cm<3> or less. Thereby, unnecessary residues are not generated at the time of formation of a polysilicide pattern.