发明名称 Integrated circuit with buried interconnections and method of manufacturing such a circuit
摘要 The integrated circuit comprises a semi-conductor substrate 10 having semi-conductor zones near the surface, although buried, 24, doped in order to increase the electrical conductivity thereof. Metal beams 26 are contained in some at least of the doped interconnection zones. <IMAGE>
申请公布号 FR2616011(A1) 申请公布日期 1988.12.02
申请号 FR19870007397 申请日期 1987.05.26
申请人 MATRA HARRIS SEMICONDUCTEURS 发明人 DIDIER SAVE
分类号 H01L21/74;H01L23/535;(IPC1-7):H01L21/74;H01L21/82;H01L21/88 主分类号 H01L21/74
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