| 摘要 |
PURPOSE:To enhance the mass production capacity of semiconductor devices by a method wherein a dimension measuring pattern is arranged across at least one step formed on a semiconductor substrate. CONSTITUTION:A dimension measuring pattern 10 is arranged across a step between a semiconductor substrate 11 and a silicon dioxide 12 formed on the substrate 11. At this time, the dimensional difference between the upper and lower parts of the step can be calculated by measuring the dimension 14 of the part 14 step of the pattern 10 and the lower part 15 step of the same 10 for making a comparison. Through these procedures, the improvement of space efficiency, the simplification of dimension measurement, the shortening of measuring time and the earlier detection of any abnormal dimension can be attained to control the dimensional difference between the upper and lower parts step of the circuit pattern 10 so that the mass production capacity of semiconductor devices may be enhanced.
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