| 摘要 |
PURPOSE:To prevent the breaking of wire due to failure of metal embedment by a method wherein all over the side face of a contact hole is coated in the same depth by a semiconductor or metal film, and a metal is buried irrespective of the depth of the contact hole. CONSTITUTION:Insulating films 5 and 8 are deposited on the surface of a semiconductor substrate 1 having level difference, the difference is made flat, and after a contact hole 9 having non-uniform depth is perforated on the insulating films 5 and 8, a semiconductor or metal film is formed on the side face and the bottom face of the contact hole 9, and a metal is selectively deposited in the contact hole 9. As all over the side face of the contact hole 9 is covered in the same depth by amorphous silicon films 15 and 16, for example, the contact hole 9 can be filled up entirely even when the depth of the contact hole is non-uniform due to the level difference formed on the semiconductor substrate 1. As a result, the breaking of wire caused be failure of metal embedment can be prevented.
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