| 摘要 |
PURPOSE:To accurately determine the electrical sensitivity of a photosensitive element by a method wherein a coating is provided of a light-shielding film on portions other than those mounted with a photosensitive element and electrode. CONSTITUTION:To a fully-completed semiconductor integrated circuit device 1, a positive-type photoresist is applied, containing a pigment capable of absorbing, for example, light with wavelength of 10-10000 nm, to be developed later into a light-shielding film 2. The photoresist is removed by photolithography from the tops of a photosensitive element 3 and electrode 4 and, on locations other than those mounted with the photosensitive element 3 and electrode 4, the photoresist is converted into said light-shielding film 2. With the device being designed as such, the portions covered by the light-shielding film 2 are not exposed to light even when the entirety of the semiconductor integrated circuit device 1 is illuminated with light. In this way, the electrical sensitivity of a photosensitive element 3 may be accurately determined.
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