| 摘要 |
PURPOSE:To make a device high-speed and to reduce noise, by interposing two pairs of phase-shifting gates and accumulation gates between an input diode and a charge transfer element and accumulating only detected signal charges, which are obtained by excluding background light from signal charges accumulated under a first accumulation gate, under a second accumulation gate. CONSTITUTION:An input gate 6 made of polycrystalline Si is located on an SiO2 film 3 on an Si substrate 1, where an input diode 2 is formed, and further an accumulation gate 21, a first phase-shifting gate 22, a second accumulation gate 23, a second phase-shifting gate 24, and a transfer electrode 25 of a charge transfer element are disposed on the film 3. Signal charges 26 coming from an infrared-ray detecting element 11 are inputted to the diode 2 of such composition. A direct-current voltage is applied across the gates 6 and 21 so that signal charges 26 are accumulated in a potential well 27 formed under the gate 21. Subsequently a direct-current voltage is applied across the gates 22 and 23 so that signal charges 26A exclusive of background light are supplied to a potential well 28 under the gate 23.
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