| 摘要 |
PURPOSE:To prevent stepped cuttings, wedged cuttings and the like from being generated in an upper wiring layer, by forming an Si oxide layer, which contains As in a specific ratio or above, on a wiring layer and next forming openings in this oxide layer and heating them in an atmosphere of an inactive gas. CONSTITUTION:A thick oxidizing film 3 is formed selectively on a semiconductor substrate 1. Next an oxidizing film 4 serving as a gate oxidation film is formed on each part which is not covered with the film 3. Further a first wiring layer 5 is formed selectively thereon. In succession the whole surface including this layer 5 is coated with an Si oxide layer 6 containing As of 2.7 atom% or more. After openings 9s, 9d, 10s, 10d are formed on this layer 6, heat treatment in an atmosphere of an inactive gas is performed to provide them with fluidization processing. Edge parts of respective windows 9s, 9d, 10s, 10d in the layer 6 are thus rounded to have smooth shoulder parts by the fluidization processing. Next a second wiring layer 11 is formed on this layer 6. Accordingly, stepped cuttings and wedged cuttings and the like can be prevented from being generated in a layer 11 and the like.
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