| 摘要 |
PURPOSE:To reduce the leak current by a method wherein a hydrogenated silicon nitride film is formed on the bottom surface of an upper gate type thin- film transistor active layer and a conducting electrode is provided under the silicon nitride film for the accumulation of charges in the silicon nitride film. CONSTITUTION:A hydrogenated silicon nitride film 3 is formed on the bottom surface of an active layer of an upper gate type thin film transistor of the ordinary type and a conducting electrode 9 is built under the nitride film 3. In the process of the formation of the respective layers of the transistor or after the completion of the process, or after the installation of the transistor, charges are caused to be accumulated in the nitride film 3. For example, the active layer bottom surface is of the p-type in case of an n-channel transistor, which blocks the flow on the bottom surface. In this way, the leak current can be reduced. |
