| 摘要 |
PURPOSE:To lower resistivity, and to increase the B constant by composing an oxide semiconductor for a thermistor of the sintered mixture of a metallic oxide and containing five kinds of cobalt, copper, lithium, zinc and silicon at a specific rate as constituent metallic elements for the sintered mixture. CONSTITUTION:An oxide semiconductor for a thermistor consists of the sintered mixture of a metallic oxide, and five kinds of 75.0-96.5 atom % cobalt (Co), 1.0-4.0 atom % copper (Cu), 2.0-18.5 atom % lithium (Li), 0.5-12.0 atom % zinc (Zn) and 0.0-2.0 atom % silicon (Si) (where except 0.0 atom %) are contained at 100 atom % in total as metallic elements for the sintered mixture. Consequently, the oxide semiconductor for the thermistor having low resistivity in a region 1 and a high B constant can be acquired. Cobalt oxide (CoO) is used as a basic composition in the semiconductor, and the high B constant can not be attained by the contribution of hopping conduction when tricobalt tetraoxide (Co3O4) is formed.
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