| 摘要 |
PURPOSE:To detect the high-temperature hysteresis of a small-sized and lightweight device with high reliability by a method wherein an island-shaped N-type silicon region is formed on a P-type silicon substrate and an aluminum electrode is installed at an opening in an insulating film on it. CONSTITUTION:When a voltage is impressed on an aluminum electrode 5 and an electric current flowing between the electrode and a P-type silicon substrate 1 is measured, a change in the electric current against the voltage shows a characteristic of a diode which has a volt-ampere characteristic as shown in (a) when it is not subjected to the thermal hysteresis. On the other hand, because an alloying reaction is caused between the aluminum electrode 5 and the silicon substrate 1 under a high-temperature environment, an alloy spike 6 is caused and its volt-ampere characteristic does not show the characteristic of the diode as shown in (b). If the characteristic of the diode between a metal electrode and the silicon substrate is measured in this manner, it is possible to detect the high-temperature hysteresis. |
