| 摘要 |
PURPOSE:To design for an enhanced-density circuit integration by a method wherein a MOS transistor is built in a trench and the connection of a diffusion region to a wire is accomplished through the intermediary of a conducting film making contact with the diffusion region over a gate. CONSTITUTION:A trench 12 is formed in the surface of a p-type silicon substrate 11 and, on the side walls of the trench 12, an n<+> source region 13 and drain region 14 are formed. A gate oxide film 17 and polycrystalline silicon gate 15 are built, which completes a MOS transistor provided with a channel region 16. A contact section 20 is formed, and then a polycrystalline silicon film 21 is formed so that it may provide a cover on the trench 18 and come into contact with the contact section 20 of the source region 13. An interlayer insulating film 19 is deposited by CVD, aluminum is evaporation-deposited after etching, and an aluminum wire 22 is formed in contact with the polycrystalline silicon film 21. This design reduces the area that a MOS transistor occupies.
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