| 摘要 |
PURPOSE:To achieve uniform film thickness and hence improve a transfer efficiency by a method wherein, when 1st-3rd transfer electrodes which have respective insulating films on their surfaces are built up on a semiconductor substrate, the surface insulating films for isolation are applied every time the respective transfer electrodes are formed. CONSTITUTION:An insulating film 2 such as an SiN film is applied to the surface of an Si substrate 1 and 1st transfer electrodes 3 made of polycrystalline Si are formed on it with intervals and all the exposed surfaces of the electrodes 3 are covered with SiO2 insulating films 4a. Then 2nd transfer electrodes 5 made of polycrystalline Si are formed from the middle parts of the upper surfaces of the films 4a to the middle parts of the film 2 and the 1st electrodes 3 and the 2nd electrodes 5 are covered with SiO2 insulating films 4b. After that, a polycrystalline Si film 6 which is to be divided into 3rd electrodes are built up over the whole surface and, after apertures are drilled in the film 6 above the films 4b, an SiO2 insulating films 4c are applied to whole surface. With this constitution, the thicknesses of the insulating films for isolation between the transfer electrodes can be uniformized by forming the respective insulating films every time the respective electrodes are formed so that the degradation of charge transfer can be avoided.
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