| 摘要 |
PURPOSE:To prevent source/drain diffused layers from overlapping an insulating layer and reduce a mirror capacitance by a method wherein the substrate of a MOSFET is so formed as to make the main surfaces of the source/drain diffused layer parts of the substrate at a level lower than the main surface of a gate part. CONSTITUTION:The main surfaces 3a and 4a of source/drain diffused layer parts of a substrate 5 is made to have a lower level than the main surface of the gate part of the substrate 5 to provide steps between both the main surfaces and impurity ions are implanted into the lower level main surfaces 3a and 4a provided with a required interval between themselves. The ranges of the respective implanted layers 3a and 4a are determined by the lengths l1 and l2 of the eaves of a patterned resist layer 6 provided as a mask. By a heat treatment, the impurity ions are diffused from the respective implanted layers 3a and 4a into the substrate 5 side and also diffused toward the gate side from edges 9 and 10 into respective parting regions 7a and 8a to form diffused parts 7b and 8b. The respective diffused layers 3b and 4b including the diffused parts 7b and 8b are formed as source/drain regions.
|
