| 摘要 |
PURPOSE:To recover a transference electrode by irradiating a laser beam to a disconnected part or a local failure part of the electrode using a light source of laser etc., in an atmosphere of a material gas for chemical gaseous phase growing of a transference conductive film. CONSTITUTION:In a material gas atmosphere for chemical gaseous phase growing of a transference conductive film, alignment between the light axis of a laser beam 13 and a disconnected part 15 of a transference electrode 14 is conducted, and a local film forming is made by the chemical gaseous phase growing by a local over heating with the beam 13 irradiated. A film forming rate has been pre-measured for dependency of a laser power and irradiation time, and the irradiation time and laser power is adjusted so that they have the same degree of the transference electrode. And the film forming is possible in any region in a film forming range with a laser beam shape formed with an aperture, etc. This enables recovering for a disconnected part 15 or local failure part of the electrode 14 having an optional size.
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