| 摘要 |
PURPOSE:To obtain the titled dielectric material capable of being baked at a low temp. and having superior insulating characteristics, mechanical strength and chemical durability by providing a special compsn. consisting of SiO2, CaO, MgO and Al2O3. CONSTITUTION:10-60wt.% SiO2 is mixed with 10-60wt.% CaO, 1-30wt.% MgO and 0-50wt.% Al2O3 and the mixture is further mixed with about 70wt.% crystalline filler such as Si3N4 as required. The mixture is then melted by heating to 1,500-1,700 deg.C, vitrified by rapid cooling and ground to obtain a dielectric material for a circuit board made of glass having <=1,200 deg.C crystallization temp. |
