| 摘要 |
PURPOSE:To increase the number of pins, and prevent the generation of interface exfoliation, by a method wherein an internal electrode wiring is constituted as a multilayer film, for example, a Ti film is stacked on an Al film to constitute a multilayer structure, an Au diffusion layer composed of Pd is vapor- deposited on the pad of an Al/Ti multilayer film, an Al bump is formed, and many Al pads are arranged on a chip. CONSTITUTION:As an electrode structure, an Al internal electrode wiring 11 is formed on an insulating film 17 on the surface of a device 16, which wiring is formed by, e.g., sputter-deposition of Al or Al alloy. By the similar deposition, a Ti internal electrode wiring 12 is formed on the Al internal electrode wiring 11. A Ti film 13 is vapor-deposited. After a Pd layer 14 as a diffusion barrier layer of Au is vapor-deposited on the Ti film 13, an aperture is made only on a pad 19 by passing a photoresist process, and an Au bump 15 is formed by electro-plating. After that, a Pd/Ti layer except the Pd14/Ti15 layer under the Au bump 15 is eliminated to obtain an electrode structure. |
