| 摘要 |
PURPOSE:To obtain a monolithic semiconductor laser element capable of amplifying and controlling laser oscillation by using the lower layer of an active layer in a multilayer growth layer in a mesa section as an emitter layer conducting with a substrate while employing the upper layer of the active layer as a base and using the upper layer of the base layer as a collector layer. CONSTITUTION:A semiconductor laser element 1 is formed in structure in which an active layer 6 is formed between an emitter layer 5 and a base layer 7. A transistor in a grounded-base connection operates with a power supply VCB inserted between a collector C and a base B and with a bias VBE between an emitter E and the base, and amplifies an input signal 18 to the base. A laser diode 19 receives the amplified current and emits an amplified optical signal 20. Accordingly, such a semiconductor laser element 1 is incorporated into an apparatus such as an optical repeater and used.
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