| 摘要 |
PURPOSE:To obtain electrode-resistor having high reliability and high accuracy without increasing cost by a method wherein an electrode material film is formed onto a semiconductor substrate, an electrode pattern is shaped through photographic processing, a window hole is bored to an insulating film on the pattern, one part of the surface of the electrode is probed, and one part of the electrode pattern is trimmed by a laser through the insulating film or the window hole, measuring the electrical characteristics of an element. CONSTITUTION:In an electrode-pattern forming process in a semiconductor device such as an IC, a diffusion layer 3 as one part of an element region is shaped through selective diffusion, using a surface oxide film 2 for an Si substrate 1, etc., as a mask, and a window hole for an electrode contact is bored to the oxide film 2. A metal such as Al is evaporated, and electrode patterns 4a, 4b are formed through photoetching employing a pattern mask. A measuring probe 5 is brought into contact with the pad section 4b for the electrode patterns, and an electrode is cut at a position to be trimmed 6 required through laser trimming, measuring a resistance value, etc., thus shaping a resistor 7. Lastly, a chip and leads are molded and sealed with a resin 12, etc.
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