| 摘要 |
PURPOSE:To obviate aluminium interconnection pattern for producing a semiconductor element in fine structure, by connecting a P-type diffused layer to a gate electrode interconnection provided by an N-type polycrystalline silicon layer through a P<+> type polycrystalline silicon layer. CONSTITUTION:Dopant ions are implanted only in an element forming region in an N-type well 2 to form a P-type diffused region 7. An N-type diffused region is formed in the element forming region other than the N-type well 2, so that an N-channel-type MOS transistor is provided. An interlayer insulating film 8 of silicon oxide or the like is deposited all over the surface to a thickness of 0.6 mum, and the insulating film 8 is selectively etched to provided at aperture 9 so that the region 7 and a gate electrode interconnection 6 are contacted through the aperture. A polycrystalline silicon layer doped with a P<+> type dopant is deposited all over the surface and is selectively etched to form an electrode interconnection 10 for connecting between the region 7 and the interconnection 6. In this manner, a semiconductor element can be produced in fine structure. |
