| 摘要 |
PURPOSE:To obtain a semiconductor laser with narrow spectrum line width by connecting both ends of the gain region with a waveguide having lower loss and optically connecting the conducted light to a sector form diffraction lattice provided on the outside at one part of the waveguide. CONSTITUTION:After a non-reflecting film on both ends of a semiconductor laser 1, it is optically connected with a single mode fiber 2. A lens made of Si with high refractive index is used for connection. A part of the flood of the single mode fiber 2 is etched, a sector form diffraction lattice 4 is pressed on that part to optically connect the single mode fiber 2 to the diffraction lattice 4. By doing so, it is possible to vary the oscillating wavelength as the width of the spectrum line is narrowed, thereby obtaining a semiconductor laser with narrow width of the spectrum line.
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