| 摘要 |
PURPOSE:To fill a gap between wirings with a thin film without generating a cavity, by forming the thin film after a material whose reflectivity for a radiating light is lower than that of a wiring material is formed on the surface of a metal wiring. CONSTITUTION:When a thin film is formed by an optical CVD method, by forming, on the surface of a metal wiring, a material whose reflectivity is lower than the metal wiring, the reaction on the metal wiring is restrained, and the speed is approximated the reaction speed in a gap or further decreased. For example, by forming poly Si 3 on an aluminum wiring 2, a reflected light 8 on the wiring is restrained and approximated a reflected light 9 at the bottom part of a wiring gap, and the difference of reaction speed between the upper part of the wiring 2 and the part in the wiring gap 4 is reduced. After all, the difference between the formation speed of the film on the wiring 2, i.e., Si 3 and that of the film in the wiring gap 4 is reduced. Therefore, before the gap is filled with the film formed in the wiring gap 4, the upper part of the gap is closed by a film formed on the wiring, and a cavity does not generate in the gap.
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