Semiconductor laser device and method for manufacturing the same.

摘要

A semiconductor laser device comprises a substrate (10) having an n-type buffer layer (11), a semiconductor laser element and auxiliary element, provided side by side on the buffer layer. The semiconductor laser element includes a mesa portion having a p-type low resistant semiconductor region (13c) provided above the buffer layer, an active region (12a) consisting of a semiconductor formed on the buffer layer and low resistant region, a pair of buried portions (13a) integrally formed with the low resistive sregion and formed on and contiguous to opposite sides of the active region in the width direction. A lateral hole (35) is provided between the buffer layer and low sresistive region on the side of buried portion. The auxiliary element includes a high resistive regions (13d) integrally formed with the low resistant region and positioned on the sides of low resistive region.