发明名称 ELECTRODE IN SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent effectively bonding damage in Cu ball bonding, by constitut ing a two-layered film wherein the lower layer film is made of nonrigid alumi num and the upper layer film is made of rigid aluminum. CONSTITUTION:One end-portion of a 1.0-2.0mum thick first layer metal film 4 made of pure Al is turned into a wiring directly connected with an element, and the other end-portion is turned into the lower layer electrode 4a of a bonding pad. Otherwise, a part which is not directly connected with the element but separated from the wiring is formed as the lower electrode 4b of the other bonding pad. A part of a 0.5-2.0mum thick second layer metal film 7 made of Al containing Si is turned into a second layer wiring connected with a first Al wiring via a through hole. The other end of it is piled on the lower electrode 4b, and turned into the upper layer electrode 7b of the bonding pad. Other part is piled on the lower electrode 4a connected with the first layer Al wiring, and turned into an upper layer electrode 7a on the bonding pad.
申请公布号 JPS63293930(A) 申请公布日期 1988.11.30
申请号 JP19870128281 申请日期 1987.05.27
申请人 HITACHI LTD 发明人 TSUKADA HIROSHI;HAIJIMA MIKIO
分类号 H01L23/52;H01L21/3205;H01L21/60 主分类号 H01L23/52
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