| 摘要 |
<p>PURPOSE:To implement the conditions of fine wiring and high heat resistance which are incompatible with each other, by forming the fine wiring parts corresponding to a semiconductor element by etching a conductor thin film. CONSTITUTION:Fine wiring parts 2 corresponding to a semiconductor element 1 are constructed by etching a conductor thin film formed on the surface of a ceramic substrate 3 thereby to form a pattern. The electrical connection of the parts 2 and the element 1 is performed by a wire bonding utilizing gold wires 4. As the method for forming the conductor thin film, a method such as electroless plating, vacuum deposition or sputtering is used. With this, the conditions of fine wiring and high heat resistance are implemented which are incompatible with each other.</p> |
