| 摘要 |
PURPOSE:To increase the area in contact with the surface of a manufacturing device specimen table, to enhance the cooling efficiency of a wafer, and to reduce the rate of percentage defective generating in a treatment process by a method wherein the recesses and projections on the rear of a wafer are made small. CONSTITUTION:The rear of the substrate used for manufacture of a semiconduc tor element are made flat, and the maximum difference of the recesses and the projections on the rear of the substrate is brought down to 2-10mum. As a result, the contact area of the wafer with the surface of a manufacturing device specimen table is increased. Accordingly, as the cooling efficiency of the substrate is enhanced by the increase of said contact area, the unsatisfactory product generating by heating can be prevented, and the percentage defective of the product caused by heating can be minimized.
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