| 摘要 |
<p>A random-access memory has a plurality of memory cells (12ij). Each cell (12ij) includes a magnetic storage element (30). The magnetic storage element (30) includes a thin film of magnetic material (74) disposed on a semiconductor substrate (70) and having further disposed thereon transistors (22a,22b) connected in a flip-flop configuration. The thin magnetic film (74) has different remanent magnetization states used for information storage. A pair of strip conductors (78,79) used to provide connections (23) to the flip-flop configuration of the transistors (22a,22b) are magneticaly coupled to the remanent magnetization states. One of the currents (I23a,I23b) passed to the gates of the flip-flop transistors (22a,22b) is delayed by one of the remanent states relative to the other current so that the state of the flip-flop is determined by the state of the magnetic storage element (30). Preferably a pair of mutually orthogonal remanent states is used for information storage to give the storage cell a relatively high frequency response.</p> |
