发明名称 |
SEMICONDUCTOR DEVICE HAVING MULTI-THICKNESS METALLIZATION AND PROCESS FOR THE FABRICATION THEREOF |
摘要 |
Structure and method for metallization patterns of different thicknesses on a semiconductor device or integrated circuit. The improved structure and method utilizes three layers of metal in order to reduce the required number of processing steps. One preferred embodiment entails a single metal deposition sequence followed by two etch steps, while a second embodiment, suitable for thicker metallization, requires only two depositions and two etch steps. |
申请公布号 |
GB2168846(B) |
申请公布日期 |
1988.11.30 |
申请号 |
GB19850031175 |
申请日期 |
1985.12.18 |
申请人 |
* SGS MICROELETTRONICA SPA |
发明人 |
CLAUDIO * CONTIERO;GIULIO * IANNUZZI;GIORGIO * DE SANTI;FABRIZIO * ANDREANI |
分类号 |
H01L23/52;H01L21/28;H01L21/3205;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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