| 摘要 |
PURPOSE:To obtain a semiconductor device excellent in heat-dissipating properties by loading an LSI chip onto a wiring substrate and superposing a thermal conductive board having an area larger than the chip onto the LSI chip or mounting the thermal conductive board with a solder material. CONSTITUTION:An LSI chip 4 is face-down bonded with a mullite wiring substrate 3, in which bump electrodes 2 consisting of solder are set up onto the rear of a chip carrier type semiconductor device, through bump electrodes 5. An SiC substrate 6 is connected onto the top face of the chip 4 through a solder material 7 composed of an Au-Sn alloy. The packed chip is sealed with an epoxy resin 8 between the wiring substrate 3 and the SiC substrate 6 in order to increase mechanical strength. The SiC substrate 6 is excellent in thermal conductivity while having a heat-dissipating area wider than the LSI chip 4 at that time, thus efficiently dissipating heat generated in the chip 4 from the electrode non-forming main surface side.
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