| 摘要 |
PURPOSE:To stabilize the stoichiometric composition of impurity ionimplanted layer as well as to improve the rate of electric activation of impurities by a method wherein the annealing protective film to be used for a III-V compound semiconductor is composed of a silicon nitride film in which oxygen ions are implanted. CONSTITUTION:An impurity ions implanted layer 5 and an annealing protective film 1 are formed on the surface region of a III-V compound semiconductor substrate 6 having Ga as a constituent element. The annealing protective film 1 is composed of the SiN film in which oxygen ions are implanted. As the oxygen density in the annealing protective film can be controlled easily using the annealing protective film 1 above-mentioned and also as a film in which a proper quantity of oxygen ions are implanted can be used, the external diffusion of Ga in the protective film is controlled, and the density between the Ga empty hole and a lattice can be suppressed to the minimum even after impurities are replaced with Ga. Consequently, as the stoichiometric composition of the impurity ion implanted layer can be stabilized, the electric activation of the impurities can be improved.
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