| 摘要 |
PURPOSE:To prevent the short circuit among the electrodes after the second layer by causing the end part of a first-layer electrode formed, including the element region, on an element isolation film having a thick central part and a thin peripheral part to remain on the upward slope side of the element isolation film. CONSTITUTION:On a semiconductor substrate 1, an element isolation region 2 is formed which consists of an element isolation film that is thick in the central part thereof and thin in the peripheral part thereof. And the end part of a first-layer electrode 3 formed on the region 2 including an element region 6 is formed so that it is positioned at the center side of the electrode 3 forming region ranging with the end of the electrode 3 from the central part of the region 2. A taper is formed in the end part of the electrode 3, and the taper formed by the region 2 and the taper angle made by the end part of the electrode 3 are overlapped so that they are offset. On the electrode 3, a second-layer electrode 5 is formed through an insulating film 4. |
