| 摘要 |
PURPOSE:To provide a switching element having preferable characteristics by sequentially laminating a first electrode layer, a first semiconductor layer, an insulator layer, a second semiconductor layer and a second electrode layer on a transparent insulating substrate to reduce a leakage current. CONSTITUTION:A transparent electrode film 12 made of an ITO or the like is formed, for example, by an electron beam depositing method on an insulating substrate 11 made of glass or the like. A first n-type amorphous silicon layer 13 is deposited, for example, by a plasma CVD method with mixture gas of silane gas and phosphine gas as a material thereon. Further, an insulator layer 14 made of silicon nitride or the like is deposited similarly by the plasma CVD method mainly with silane gas and ammonia gas as materials. Then, a second n-type amorphous silicon layer 15 is deposited in the similar thickness by the similar method to the first layer. Subsequently, a metal electrode layer 16 is formed, for example, by a vacuum depositing method with metal, such as aluminum. Thus, a high performance switching element is formed.
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