发明名称 MULTILAYERED CERAMIC WIRING SUBSTRATE CHARACTERIZED BY HIGH HEAT CONDUCTIVITY
摘要 <p>PURPOSE:To make it possible to form a high density circuit having conductors including resistors, signal lines, power source layers and the like and to improve heat dissipation property, by providing a resistor layer, whose main component is tantalum nitride, in a ceramic layer constituted with a polycrystalline body, whose main component is aluminum nitride. CONSTITUTION:An insulating ceramic layer 1 constituted with a polycrystalline body of aluminum nitride as a main component. A resistor 2 is formed with tantalum nitride as a main component. Conductor layers 3 for signal lines, power sources and the like are formed with tungsten as a main component. The layers are electrically connected through via holes, which are formed in the insulating ceramic layer. Die pads 5 and bonding pads 6 are formed on a multilayered ceramic board formed in this way so that LSI chips can be mounted. I/O pads 7 are formed on the rear surface of the substrate. Heat that is yielded from the LSIs, which are mounted on the substrate, is diffused in the ceramic substrate through the die pads 5.</p>
申请公布号 JPS63292693(A) 申请公布日期 1988.11.29
申请号 JP19870126898 申请日期 1987.05.26
申请人 NEC CORP 发明人 HAMAGUCHI HIROYUKI;SHIMADA YUZO
分类号 H05K3/46 主分类号 H05K3/46
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