| 摘要 |
PURPOSE:To stably maintain a floating zone and to enable growth of large single crystal in growing single crystal by floating zone method by infrared heating, by setting a light shielding part to surround a part to be heated and limiting a feed rate of raw material bar. CONSTITUTION:A production device for single crystal by infrared heating comprising rotary elliptic mirrors 9 and 10, infrared lamps 11 and 12 positioned at one focus F1 of the rotary elliptic mirror 9 and one focus F2 of the mirror 10 and a light shielding part 18 positioned in the vicinity of a solid-liquid interface 21 at crystal side of a part 13 to be heated between a raw material bar 15 placed on the other focus F0 of the rotary elliptic mirrors 9 and 10 and a crystal bar 17 in such a way that the light shielding part surrounds the part 13 to be heated. Then in order to enlarge the diameter of grown crystal, the raw material bar is sent to the part 13 to be heated at a rate proportional to the square of the ratio of the diameter of the aimed crystal and the diameter of the raw material bar thinner than the aimed crystal to form a trapezoidal floating zone.
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