| 摘要 |
In known MOS dosimeters for measuring an energy dosage within radiation fields, which comprise a semiconductor substrate with an insulator layer and a metal contact or poly-si-contact, a measurement is taken and irreversible damage is done to the insulator layer. Prior art dosimeters of this kind cannot be electrically reset, nor can such MOS structures be directly integrated with evaluating electronics. The present invention avoids these drawbacks by providing a hard-radiation resistant insulator layer with a floating gate X. Such a resistant insulator layer is produced in a "hardened" process by thermal dry oxidation of silicon at low temperatures of about 850 DEG to 950 DEG C. The inventive dosimeter makes it possible to integrate, on the floating gate, both negative and positive charges. This permits an integration of MOS sensors and signal processing electronic elements on a single chip. By providing a concentrator, the sensitivity of the inventive MOS dosimeter can be augmented by several orders of magnitude, as compared to conventional devices.
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