| 摘要 |
PURPOSE:To improve breakdown strength between an electric source wiring layer and a grounding wiring layer by a method wherein the part where the two wirings come close to each other is insulated with a PSG layer and a thermal oxide film. CONSTITUTION:A PSG film 2 is formed on a silicon substrate 1. An electric source wiring layer 3 and a ground wiring layer 4 are formed in the PSG layer 2. A thermal oxide film 5 with a thickness about 1 mum is formed on the silicon substrate 1 between the electric source wiring layer 3 and the grounding wiring layer 4 which come close to each other. By providing not only the PSG layer 2 but also the thermal oxide film 5 between the electric source wiring layer 3 and the grounding wiring layer 4 like this, the dielectric breakdown strength between the two wiring layers can be improved. |
