发明名称 REACTOR FOR VAPOR SURFACE TREATMENT
摘要 PURPOSE:To reproducibly control a dopant concentration in epitaxial membrane, by combining piping system for feeding a mixed gas with a vacuum evacuation device and piping system for feeding conveying gas so as to work specifically. CONSTITUTION:Hydrogen chloride gas, silicon raw material gas and dopant raw material gas are stored in vessels 27, 27a and 27b equipped with a pressure adjusting equipment and adjusted in flow rate and hydrogen gas which is a conveying gas is united to piping P1 each at uniting points 6, 6a and 6b and poured from a gas feed nozzle 1c provided in a reaction chamber 1 into the reaction chamber 1. The range connected in the piping pump and surrounded with valves 26, 13, 13a, 13b, 12 and 10 are constituted to be able to carry out vacuum evacuation as well as range R1, range R3, range R4 are each constituted to be able to carry out vacuum evacuation. On one hand, hydrogen gas and nitrogen gas which are conveying gas is made to flow from vessels 24 and 23 in the piping from a branched point 5 to a united point 2. The piping is not connected to a vacuum pump 20 and feeding of conveying gas to the reaction chamber 1 is carried out while vacuum evacuation of each range R1, R2, R3 or R4 is carried out.
申请公布号 JPS63291895(A) 申请公布日期 1988.11.29
申请号 JP19870128577 申请日期 1987.05.26
申请人 SUMITOMO METAL IND LTD 发明人 SAKAMOTO JUNICHI;NAKAYAMA SATORU;IKEGAMI KAORU;TAKASUKA EIRYO;GOTO KATSUFUMI
分类号 C30B25/14;B01J4/00;B01J12/02;C23C16/44;C23C16/455;C30B31/16 主分类号 C30B25/14
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