| 摘要 |
PURPOSE:To easily and safely obtain high-purity Ga in a short time at a low energy cost without generating hazardous substance, by chlorinating Ga- containing scarps with Cl2, distilling the reaction product simultaneous to or after the chlorination reaction, purifying the resultant crude GaCl2 and reducing the product. CONSTITUTION:Ga-containing scraps generated e.g. from a production process of a compound semiconductor such as GaAs or GaP are pulverized, as necessary, and made to react with Cl2 gas to chlorinate a part or total of Ga and other elements. Simultaneous to or after the chlorination reaction, the low-boiling chloride (e.g. AsCl3 or PCl3) existing in the raw material as an impurity is separated by distillation to obtain crude GaCl2. The crude GaCl2 is purified by blasting Cl2 gas into the compound to obtain GaCl3 and subjecting the product to distillation and then fractional distillation. The resultant refined GaCl3 is reduced or electrolyzed to recover high-purity Ga.
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