SEMICONDUCTOR DEVICE WITH ISOLATION BAND

摘要

PURPOSE:To improve the yield and quality of a semiconductor device by a method wherein step parts of 1st (longitudinal) isolation bands and 2nd (lateral) isolation bands which isolate semiconductor elements from each other are not formed in regions where the 1st isolation bands and the 2nd isolation bands cross each other. CONSTITUTION:Necessary diffusion and oxidization processes and a photoetching process are applied to a semiconductor substrate to form a plurality of semiconductor elements 2 arranged along a longitudinal direction and a lateral direction. The semiconductor elements 2 are arranged longitudinally and laterally so as to form a matrix and longitudinal isolation bands 7 and lateral isolation bands 8 which isolate the semiconductor elements 2 from each other are provided between the respective semiconductor elements 2. The longitudinal isolation bands 7 and the lateral isolation bands 8 are extended along the directions perpendicular to each other and discontinued in the regions (for instance a region 9) where the respective isolation bands 7 and 8 cross each other and hence formed intermittently. With this constitution, as the longitudinal isolation band 7 and the lateral isolation band 8 are not formed in the region 9 where the respective isolation bands 7 and 8 cross each other, a steep step part does not exist in a corner part. Therefore, as liquid flows through the corner parts in a later etching process, there is no part where the liquid stays so that thin films or refuse remaining at the corner parts after a drying process can be eliminated.