| 摘要 |
PURPOSE:To facilitate making regions of an oxide superconducting material layer other than wiring regions normally conducting or insulating by a method wherein the oxide superconducting material layer is formed on the surface of a semiconductor element and ions are implanted into the regions other than the wiring regions to make the regions non-superconducting and the resistance value is varied by regulating the dosage of the ion implantation. CONSTITUTION:An oxide superconducting thin film 8 is formed on a semiconductor element by a sputtering method. After a photoresist pattern 9 is formed by photolithography, ions are implanted into a region other than a wiring region with the resist pattern 9 as a mask. As the ions, for instance, O<+> ions are implanted under the conditions of 80 keV and 1 X 10<16>cm<-2>. The type of ions may be not only O<+> but also N<+>, P<+> or BF<2+>. After the resist pattern 9 is removed, annealing is carried out in an oxygen atmosphere to stabilize the implanted ions and stabilize the wiring part and the superconducting wiring pattern is obtained. With this constitution, as a wiring of superconducting material can be formed without using an etching process, the wiring of superconducting material can be formed without a stepped part.
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