| 摘要 |
PURPOSE:To make a pore forming rate and the extent of dispersion in dielectric breakdown voltage smaller by pressurizing and forming powder of a reduced reoxidizing type semiconductor ceramic material and its compact by a hydrostatic press, burning this pressurized compact by means of hot pressing, and reducing, burning and reoxidizing the sintered body. CONSTITUTION:As material for a reduced reoxidizing type semiconductor condenser, there is provided with powder of material for reduced reoxidizing type semiconductor ceramics in a BT system consisting of, for example, Ba(Zr0.03Ti0.97)O3 and MnO3 or its compact. A binder is added to this powder or compact and, after evaporative granulation is carried out, it is formed by a press. The compact to be secured next is pressurized and formed by a hydrostatic press. The produced pressurized compact is burned by means of hot pressing. The sintered body obtained next is burned into reduction in H2. And the reduced and burned sintered body is heated in air and reoxidized. Then, an electrode is formed on a surface of the reoxidized sintered body, thus the deoxidizing type semiconductor condenser is manufactured. Thus, an existing rate in pores in a product can be made smaller and, what is more, the extent of dielectric breakdown voltage can be made smaller as well.
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