| 摘要 |
<p>PURPOSE:To absorb thermal stress generated during brazing or while current is on so as to prevent a barrier metallic layer or an electrode metallic layer from crack by a method wherein an aluminum layer thicker than an electrode metallic layer is coated on a barrier metallic layer and the electrode metallic layer is laminated thereon. CONSTITUTION:When a lead terminal 7 is brazed to a barrier metallic layer 3 coated on a semiconductor substrate 1 through the intermediary of elctrode metallic layers 4 and 5 so as to build a Schottky barrier diode, an aluminum layer 8 thicker than the electrode metallic layers 4 and 5 are coated on the barrier metallic layer 3 and the electrode metallic layers 4 and 5 are laminated thereon. For instance, an oxide film 2 about 0.2 mum in thickness is coated on the substrate 1 and an opening is provided at the central part thereof, then an Mo barrier metallic layer 3 0.4 mum in thickness, the aluminum layer 8 thicker than 1 mum, the nickel layer 4 0.3 mum in thickness, and the gold layer 5 0.15 mum in thickness are evaporated successively into laminated layers and a terminal 7 is brazed thereto through a solder 6. In this process, an unneeded part above the oxide film 2 is removed in accordance with the same pattern after the metallic layers 3, 8, 4, and 5 are laminated.</p> |
